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| 2SC4647 Silicon NPN Triple Diffused Application High voltage amplifier Features * High break down voltage V(BR)CEO = 300 V min. Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC4647 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 300 300 5 100 400 150 -55 to +150 Unit V V V mA mW C C Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO hFE VCE(sat) fT Cob Min 300 300 5 -- 30 -- 50 -- Typ -- -- -- -- -- -- -- -- Max -- -- -- 1.0 200 1.5 -- 4.0 V MHz pF Unit V V V A Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = I E = 10 A, IC = 0 VCB = 250 V, RBE = VCE = 20 V, IC = 20 mA I C = 20 mA, IB = 2 mA VCE = 20 V, IC = 20 mA VCE = 20 V, IE = 0, f = 1 MHz 2 2SC4647 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 600 Collector Current IC (mA) Typical Output Characteristics 1.0 16 14 0.8 12 10 8 0.4 0.2 6 4 2 A IB = 0 0 50 100 Ambient Temperature Ta (C) 150 0.4 0.8 1.2 1.6 2.0 0 Collector to Emitter Voltage VCE (V) 400 0.6 200 Typical Transfer Characteristics 100 50 20 10 5 2 1 0 0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage VBE (V) VCE = 20 V DC Current Transfer Ratio hFE 100 DC Current Transfer Ratio vs. Collector Current Ta = 75C 80 25 -25 VCE = 20 V Pulse Collector Current IC (mA) 60 40 20 0 1 2 5 10 20 50 Collector Current IC (mA) 100 3 2SC4647 Collector to Emitter Saturation vs. Collector Current Collector to Emitter Saturation Voltage VCE(sat) (V) 10 Gain Bandwidth Product fT (MHz) 5 2 1.0 0.5 0.2 0.1 1 2 5 10 20 50 Collector Current IC (mA) 100 IC = 10 IB Pulse 100 VCE = 20 V Gain Bandwidth Product vs. Collector Current 80 60 Ta = 75C 25 -25 40 20 0 1 2 5 10 20 50 Collector Current IC (mA) 100 Collector Output Capacitance vs. Collector to Base Voltage Collector Output Capacitance Cob (pF) 50 20 10 5 2 1.0 0.5 1 2 5 10 20 50 100 Collector to Base Voltage VCB (V) f = 1 MHz IE = 0 4 Unit: mm 4.8 0.3 3.8 0.3 2.3 Max 0.5 0.1 0.7 0.60 Max 12.7 Min 5.0 0.2 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (1) Conforms Conforms 0.25 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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